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전기전자 : tal thin film with ohmic contact for light emit diodes
 특허법인 이상    | 2008·11·05 14:40
[서지사항]
국가 : US
등록번호(Patent No.)/ 일자   06169297 (2001.01.02)  
공개번호(Pub.No.)/ 일자        
출원번호(Appl.No.)/ 일자   19980213735 (1998.12.17)  
출원인(Assignee)    Kwangju Institute of Science and Technology

[요약]
A metal thin film with an ohmic contact for light emit diodes and a method of producing such a film are disclosed. The metal thin film has a p-type gallium nitride (GaN) semiconductor layer. Nickel (Ni), platinum (Pt) and gold (Au) layers are deposited on the GaN semiconductor layer in a way such that the gold layer forms a top layer, with either one of the platinum and nickel layers being selectively used as an inter-diffusion barrier between metal layers. The inter-diffusion barrier may be formed by depositing platinum between the nickel and gold layers, thus forming an Ni/Pt/Au metal thin film, or formed by depositing nickel between the platinum and gold layers, thus forming an Pt/Ni/Au metal thin film. In the method, a GaN semiconductor is washed so as to be free from carbide and oxide layers. The Ni, Pt and Au layers are formed on the GaN semiconductor layer through a vacuum deposition process at 5.times.10.sup.-5 -2.times.10.sup.-1 torr. The GaN semiconductor, having the metal thin film, is heat treated for 30 seconds-3 hours and at 250-1,000.degree. C., and under nitrogen or argon ambient.

[대표청구항]
A metal thin film with an ohmic contact for light emit diodes, comprising:
a p-type gallium nitride (GaN) semiconductor layer;
a nickel (Ni) layer deposited on said p-type gallium nitride (GaN) semiconductor layer;
a platinum (Pt) layer deposited on said nickel (Ni) layer; and
a gold (Au) layer deposited on said platinum (Pt) layer, thus forming an Ni/Pt/Au metal thin film;
said platinum (Pt) layer being used as an interdiffusion barrier between said gold layer and said nickel layer.
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