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전기전자 : Method for manufacturing p-type GaN based thin film using nitridation
 특허법인 이상    | 2008·11·05 14:37
[서지사항]
국가 : US
등록번호(Patent No.)/ 일자   06294016 (2001.09.25)  
공개번호(Pub.No.)/ 일자        
출원번호(Appl.No.)/ 일자   19990421028 (1999.10.20)  
출원인(Assignee)    Kwangju Institute of Science and Technology

[요약]
Disclosed is a method for manufacturing a high conductivity p-type GaN-based thin film superior in electrical and optical properties by use of nitridation and RTA (rapid thermal annealing) in combination. A GaN-based epitaxial layer is grown to a desired thickness while being doped with Mg dopant with a carrier gas of hydrogen by use of a MOCVD process. The film thus obtained is subjected to nitridation using nitrogen plasma and RTA in combination. The p-type GaN-based thin film exhibits high hole concentration as well as low resistivity, so that it can be used where high electrical, optical, thermal and structural properties are needed. The method finds application in the fabrication of blue/white LEDs, laser diodes and other electronic devices.

[대표청구항]
A method for manufacturing a high conductivity p-type GaN-based III-nitride thin film, comprising the steps of:
growing a GaN-based epitaxial layer while doping the epitaxial layer with magnesium with hydrogen serving as a carrier gas by the use of a metalorganic chemical vapor deposition system;
conducting a first rapid thermal anneal (RTA) in a nitrogen ambient;
subjecting the grown layer to nitridation and a second RTA (rapid thermal annealing) in combination.
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