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기술분류 정보통신 | 전기전자 | 기계 | 화학·재료 | 생명과학 | 기술혁신·과학기술정책 | 기타 |
전기전자 : Silicon nitride film comprising amorphous silicon quantum dots embedded therein, its fabrication method and light-emitting device using the same
 특허법인 이상    | 2008·11·05 14:34
[서지사항]
국가 : US
등록번호(Patent No.)/ 일자   06544870 (2003.04.08)  
공개번호(Pub.No.)/ 일자   20020153522 (2002.10.24)  
출원번호(Appl.No.)/ 일자   20010836175 (2001.04.18)  
출원인(Assignee)     Kwangju Institute of Science and Technology

[요약]
The present invention relates to a light-emitting device utilizing amorphous silicon quantum dot nanostructures, wherein the light-emitting device can be fabricated using the existing silicon semiconductor fabrication technology, is excellent in light-emitting efficiency, and can emit light in the visible region including short wavelength region such as green and blue.

[대표청구항]
Method of fabricating a silicon nitride thin film comprising a silicon nitride matrix and amorphous silicon quantum dot nanostructures embedded in the silicon nitride matrix, the method comprising the steps of: placing a substrate within a thin film growth system; and supplying silicon source gas and nitrogen source gas into the thin film growth system in a flow ratio of 1:100 to 1:5000 while maintaining the substrate at a temperature of 100 to 700.degree. C. in order to form the silicon nitride film on the substrate with a growth rate of 1.4 to 10 nm/min, where the amorphous silicon quantum dot nanostructures of the silicon nitride film formed can emit photoluminescent light.
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