국가 : US
등록번호(Patent No.)/ 일자 06544870 (2003.04.08)
공개번호(Pub.No.)/ 일자 20020153522 (2002.10.24)
출원번호(Appl.No.)/ 일자 20010836175 (2001.04.18)
출원인(Assignee) Kwangju Institute of Science and Technology
The present invention relates to a light-emitting device utilizing amorphous silicon quantum dot nanostructures, wherein the light-emitting device can be fabricated using the existing silicon semiconductor fabrication technology, is excellent in light-emitting efficiency, and can emit light in the visible region including short wavelength region such as green and blue.
Method of fabricating a silicon nitride thin film comprising a silicon nitride matrix and amorphous silicon quantum dot nanostructures embedded in the silicon nitride matrix, the method comprising the steps of: placing a substrate within a thin film growth system; and supplying silicon source gas and nitrogen source gas into the thin film growth system in a flow ratio of 1:100 to 1:5000 while maintaining the substrate at a temperature of 100 to 700.degree. C. in order to form the silicon nitride film on the substrate with a growth rate of 1.4 to 10 nm/min, where the amorphous silicon quantum dot nanostructures of the silicon nitride film formed can emit photoluminescent light.